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Raw graphene is a zero-band gap semimetal and cannot effectively control its electrical properties, which limits its potential use in electronic and biosensing applications. At present, a method for adjusting the band gap of graphene has been proposed to make it possess semiconductor characteristics. One of the most effective methods is to dope impurity atoms into graphene.
The doped graphene exhibits more fascinating optical/electronic properties. Doping will affect the charge distribution of carbon atoms in graphene, which makes graphene a good substrate for FET manufacturing. In addition, the defects caused during the doping process are usually active centers in graphene for surface chemical reactions. Therefore, doped graphene usually exhibits excellent catalytic performance, which shows great promise in biological analysis.