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The current market mainly uses 2D silicon-based integrated circuits, a mature technology with low price. However, with the continuous improvement of integrated circuit integration, many problems such as the rapid increase in the number of devices on the chip and the increase in chip area have seriously affected the further improvement of integrated circuit integration and operating speed. The vertical 3D development of integrated circuits has become popular. As 3D integrated circuits have problems such as heat dissipation, circuit crosstalk and manufacturing processes, graphene has attracted attention in the application of integrated circuits because of its excellent electrical and thermal conductivity.
3D integrated circuits connect multi-layer planar devices vertically through silicon vias, which have the characteristics of high density and low power consumption. At the same time, they also cause high power consumption density and the heat generated is not easily discharged. Using graphene's excellent thermal conductivity and electrical properties, multilayer graphene nano-beams can be filled with silicon crystal holes to form a new type of 3D integrated circuit. The graphene layer serves as an electromagnetic interference shield between adjacent levels of 3D integrated circuits or between adjacent layers, which can reduce crosstalk between levels and at the same time transfer heat to the surroundings. Before transferring the graphene film grown by chemical vapor deposition (CVD), all passive components and device gates are constructed on silicon wafers to make graphene integrated circuits. Integrating the graphene field effect transistor FET multimode phase shifter on top of the Si complementary metal oxide semiconductor CMOS ring oscillator can avoid incompatibility problems through continuous integration, while retaining the inherent performance of the circuit itself.
Figure 1. Schematic illustration of RF G-FET fabrication processes: (a) transfer of CVD graphene onto a PET substrate; (b) lithographical definition of aluminum T-gate using a bilayer stack of resist as the top layer; (c) formation of natural aluminum oxide layer using pure oxygen at room temperature; (d) metalization of self-aligned source/drain contacts. (Lyu H. M, et al. 2015)
Alfa Chemistry has many years of research strength in the field of graphene applications and is committed to promoting the industrialization of graphene materials in the field of integrated circuits. Alfa Chemistry has formed a variety of process routes and mass production equipment in the main key links of CVD graphene preparation and graphene transistor manufacturing, and solved a series of technical obstacles in graphene integrated circuit modules.
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