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Langston, Xavier, and Keith E. Whitener Jr. Nanomaterials 11.11 (2021): 2837.
Graphene, epitaxially synthesized on silicon carbide or through chemical vapor deposition (CVD) on transition metals, has garnered increasing attention from industrial and commercial enterprises due to its exceptional electronic, mechanical, and thermal properties, as well as its ease of integration into devices. To harness these outstanding properties, it is often necessary to transfer graphene from its conductive growth substrate to a more suitable target substrate.
By using thermal release tape, this concept of peeling layers can be further advanced. This material bonds strongly with graphene at low temperatures but significantly reduces adhesion at high temperatures. Direct transfer of graphene through thermo-compression or thermal imprinting with etching assistance is also highly effective and allows for the continuous production of large-area graphene sheets in a roll-to-roll process. Thermal compression is advantageous when the target substrate is rigid, as is the case with silicon wafers or many other ceramic semiconductors that cannot be processed in a roll-to-roll manner. The aforementioned processes are all wet transfers, meaning that although adhesion between the graphene and the target substrate is achieved, the copper growth substrate is still chemically etched away.
Zheng, X., Chen, W., Wang, G., Yu, Y., Qin, S., Fang, J., ... & Zhang, X. A. (2015). AIP Advances, 5(5).
Raman spectroscopy was employed to study the interaction between graphene and gold nanoparticles (GNPs). Various structures of graphene combined with GNPs were prepared, including single-layer transferred pure graphene (G1), three-layer stacked graphene (G3), a composite structure of GNPs deposited on G1 (G1/GNPs), and a sandwich structure consisting of three layers of graphene and two layers of GNPs.
G1 and G3 were prepared by transferring graphene onto a quartz substrate using the thermal release tape method once and three times, respectively. Figures (a) to (d) illustrate the transfer process. First, the peelable tape is placed on top of the graphene/Cu substrate, and then the stacked tape/graphene/Cu substrate is immersed in a ferric chloride solution. After etching the Cu substrate with the ferric chloride solution, the tape/graphene film is placed onto the quartz substrate. By heating the substrate to 120 °C, the thermal release tape is released, leaving the graphene on the quartz, completing the transfer for sample G1. Sample G3 was prepared by repeating the process shown in figures (a) to (d) and transferring the graphene onto the same quartz substrate three times. G1/GNPs was prepared by transferring the graphene onto quartz once, followed by dropping the GNPs solution onto the surface and allowing it to dry naturally at room temperature. The "sandwich" sample was prepared by alternately transferring graphene and depositing GNPs using the methods mentioned above. Figures (e), (f), and (g) depict the structures of G1/GNPs, the sandwich, and G3, respectively.
Kim, Ji-Weon, et al. Applied Surface Science 508 (2020): 145057.
Several studies on the growth of single-crystal graphene have been published, but achieving large and uniform single-crystal graphene remains challenging for commercial applications. Therefore, a more practical transfer process for single-layer polycrystalline graphene grown by chemical vapor deposition (CVD) has been proposed.
Single-layer graphene grown by CVD is inevitably synthesized on both sides of the copper metal catalyst. The graphene/Cu/graphene sample is floated on the surface of water heated to 90-95 °C. After 5 hours, a uniform layer of Cu2O forms at the interface where the graphene is in direct contact with the water surface and the copper. The single-layer graphene is then peeled directly from the Cu/graphene sheet onto thermal release tape and transferred to the target substrate (SiO2/Si or polymer). Finally, large-area clean graphene is obtained on the desired substrate.
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