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Thermal Release Tape

Name: Thermal Release Tape
SKU: ACMA00017220
Rating: 5 (1 reviews)

Catalog Number

ACMA00017220

Product Name

Description

The thermal release tape is based on 100μm PET, coated with thermal foaming and debonding adhesive on one side, so that it has a certain adhesive force at room temperature, and is used for various temporary pasting and fixing processes. After processing, just heating to the set temperature for 3-5 minutes, the stickiness will disappear automatically, realizing easy peeling, leaving no glue residue, and not polluting the adherend.

Storage

The product must be stored in a cool and ventilated place, avoiding direct sunlight. Temperature 15-35°C, humidity 40-70%, valid for two years.

Color

Light green

Temperature

90-110 °C (Degumming)

Thickness

Total thickness (without transparent release film): 0.150 ± 0.005 mm
Thermal-release adhesive thickness: 0.05 ± 0.002 mm
PET Backing thickness: 0.10 ± 0.003 mm
PET Release liner thickness: 0.025 ± 0.003 mm

Time

<10 min (Degumming)

Usage

The product is suitable for cutting, grinding and polishing processes of soft and brittle materials such as LED sapphire substrates, silicon wafers (polishing and grinding after Ingot cutting), ceramics, and gallium arsenide.

Viscosity

Thermal foam adhesive surface viscosity, before pyrolysis: 60 ± 10 g/inch
Thermal foam adhesive surface viscosity, after pyrolysis: <0.02 g/inch

TDS

Download TDS

Case Study

Transferring Graphene via Thermal Release Tape

Langston, Xavier, and Keith E. Whitener Jr. Nanomaterials 11.11 (2021): 2837.

Graphene, epitaxially synthesized on silicon carbide or through chemical vapor deposition (CVD) on transition metals, has garnered increasing attention from industrial and commercial enterprises due to its exceptional electronic, mechanical, and thermal properties, as well as its ease of integration into devices. To harness these outstanding properties, it is often necessary to transfer graphene from its conductive growth substrate to a more suitable target substrate.
By using thermal release tape, this concept of peeling layers can be further advanced. This material bonds strongly with graphene at low temperatures but significantly reduces adhesion at high temperatures. Direct transfer of graphene through thermo-compression or thermal imprinting with etching assistance is also highly effective and allows for the continuous production of large-area graphene sheets in a roll-to-roll process. Thermal compression is advantageous when the target substrate is rigid, as is the case with silicon wafers or many other ceramic semiconductors that cannot be processed in a roll-to-roll manner. The aforementioned processes are all wet transfers, meaning that although adhesion between the graphene and the target substrate is achieved, the copper growth substrate is still chemically etched away.

Transfer Process of Different Samples Using Thermal Release Tape

Zheng, X., Chen, W., Wang, G., Yu, Y., Qin, S., Fang, J., ... & Zhang, X. A. (2015). AIP Advances, 5(5).

Raman spectroscopy was employed to study the interaction between graphene and gold nanoparticles (GNPs). Various structures of graphene combined with GNPs were prepared, including single-layer transferred pure graphene (G1), three-layer stacked graphene (G3), a composite structure of GNPs deposited on G1 (G1/GNPs), and a sandwich structure consisting of three layers of graphene and two layers of GNPs.
G1 and G3 were prepared by transferring graphene onto a quartz substrate using the thermal release tape method once and three times, respectively. Figures (a) to (d) illustrate the transfer process. First, the peelable tape is placed on top of the graphene/Cu substrate, and then the stacked tape/graphene/Cu substrate is immersed in a ferric chloride solution. After etching the Cu substrate with the ferric chloride solution, the tape/graphene film is placed onto the quartz substrate. By heating the substrate to 120 °C, the thermal release tape is released, leaving the graphene on the quartz, completing the transfer for sample G1. Sample G3 was prepared by repeating the process shown in figures (a) to (d) and transferring the graphene onto the same quartz substrate three times. G1/GNPs was prepared by transferring the graphene onto quartz once, followed by dropping the GNPs solution onto the surface and allowing it to dry naturally at room temperature. The "sandwich" sample was prepared by alternately transferring graphene and depositing GNPs using the methods mentioned above. Figures (e), (f), and (g) depict the structures of G1/GNPs, the sandwich, and G3, respectively.

Graphene Transfer Method Using Deionized Water and Thermal Release Tape

Kim, Ji-Weon, et al. Applied Surface Science 508 (2020): 145057.

Several studies on the growth of single-crystal graphene have been published, but achieving large and uniform single-crystal graphene remains challenging for commercial applications. Therefore, a more practical transfer process for single-layer polycrystalline graphene grown by chemical vapor deposition (CVD) has been proposed.
Single-layer graphene grown by CVD is inevitably synthesized on both sides of the copper metal catalyst. The graphene/Cu/graphene sample is floated on the surface of water heated to 90-95 °C. After 5 hours, a uniform layer of Cu₂O forms at the interface where the graphene is in direct contact with the water surface and the copper. The single-layer graphene is then peeled directly from the Cu/graphene sheet onto thermal release tape and transferred to the target substrate (SiO₂/Si or polymer). Finally, large-area clean graphene is obtained on the desired substrate.

Our products are for research use only and cannot be used for any clinical purposes.

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