Single Layer Hexagonal Boron Nitride on 285 nm SiO2/Si: 8 Pack
Catalog Number
ACMA00020977
Product Name
Single Layer Hexagonal Boron Nitride on 285 nm SiO2/Si: 8 Pack
Description
Average diameter of individual SWCNT = 1.4nm ± 0.1nm
Solubility
ethanol: 0.05 mg/mL
Application
BN on SiO2/Si wafers are ideal for creating graphene/BN interfaces, allowing the graphene to be precisely gated, increasing mobility, and reducing scattering. h-BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene. Using our h-BN on SiO2/Si wafers in conjunction with graphene, we encourage you to explore graphene heterostructures for transistor applications.
Assay
75-85% carbon basis
Coverage
0.97
Extent of Labeling
65% (PABS, typical)
Form
powder
Functionalization
sulfonic acid
Impurity Content
4% metals
Quality Level
100
Weight
0.10 lbs
Our products are for research use only and cannot be used for any clinical purposes.
