Single Layer Hexagonal Boron Nitride on 285 nm SiO2/Si: 4 Pack
Catalog Number
ACMA00020976
Product Name
Single Layer Hexagonal Boron Nitride on 285 nm SiO2/Si: 4 Pack
Description
Multi-walled carbon nanotubes (MWCNT) are vertically aligned on a Si substrate with a high density. Since all the MWCNTs are bundled by van der Walls force, CNT web is drawn easily by pinching an edge of the array out from the substrate. The web is very light weight and robust, and sometimes semi-transparent.Crystal quality of CNT is examined by Raman scattering measurement. Intensity ratio of G-peak (1580 cm-1) and D-peak (1350 cm-1) represents quality of graphitization of carbon materials. G/D of our CNT is ~3, showing high crystal quality.
Application
BN on SiO2/Si wafers are ideal for creating graphene/BN interfaces, allowing the graphene to be precisely gated, increasing mobility, and reducing scattering. h-BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene. Using our h-BN on SiO2/Si wafers in conjunction with graphene, we encourage you to explore graphene heterostructures for transistor applications.
Assay
98% (carbon as CNT)
Coverage
0.97
Dimension
10-40 nm × 1.0 mm ± 0.5 mm
Quality Level
100
Weight
0.10 lbs
Our products are for research use only and cannot be used for any clinical purposes.
