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Chakraborty, Indra Narayan, et al. Chemistry of Materials 31.7 (2019): 2258-2262.
This study demonstrates the application of InP/ZnS quantum dots (QDs) as efficient, recyclable photocatalysts for both redox and carbon-carbon coupling reactions. A key innovation lies in overcoming the typical challenges of nanoparticle (NP) catalyst reuse-namely, instability and separation difficulties in homogeneous systems. To address this, InP/ZnS QDs were embedded into a Whatman-60 filter paper substrate via a simple dip-coating process, yielding a dipcatalyst system. This paper-based platform preserved the photophysical properties of the QDs, including UV-induced luminescence and photostability.
In a model reaction, the embedded QDs enabled photoreduction of ferricyanide with excellent recyclability-maintaining catalytic activity over five cycles with negligible efficiency loss. Notably, the InP/ZnS QD-coated paper outperformed its homogeneous counterpart in terms of both durability and practicality. Additionally, the system was successfully applied in a C-C coupling reaction between 1-phenylpyrrolidine and phenyl-trans-styryl sulfone without the need for cocatalysts or sacrificial reagents, highlighting the intrinsic activity of InP/ZnS QDs.
Comparative analysis further showed that the recyclability of this "green" photocatalyst rivals that of conventional CdSe/ZnS QD systems, offering a less toxic alternative for sustainable photocatalysis. The integration of InP/ZnS quantum dots onto a flexible substrate presents a promising strategy for the design of reusable, efficient, and environmentally friendly nanocatalysts in photochemical transformations.
Ansari, Asif Ali, et al. Next Research (2025): 100289.
Indium Phosphide/Zinc Sulphide quantum dots (InP/ZnS QDs) are employed to engineer the dielectric behavior of nematic liquid crystal (NLC) systems, specifically 4-cyano-4'-pentylbiphenyl (5CB). In a recent study, InP/ZnS QDs were doped into 5CB at various concentrations (0.1-1 wt.%) to investigate their influence on the frequency-, temperature-, and concentration-dependent dielectric properties.
Uniform dispersion of the QDs within the NLC matrix was confirmed via polarizing optical microscopy, showing no observable flocculation. Dielectric spectroscopy revealed that the 1 wt.% InP/ZnS QDs-5CB composite exhibited the most significant changes in key dielectric parameters, including dielectric permittivity (ε'), loss (ε''), loss tangent (tan δ), and dielectric anisotropy (Δε'), especially in the low-frequency region. These changes are attributed to an increase in mobile ion density and enhanced molecular interactions between QDs and NLC molecules.
Notably, the 1 wt.% composite demonstrated a threefold increase in DC conductivity and a reduction in dielectric anisotropy without altering the clearing temperature (TN-I). The threshold voltage (Vth) also differed compared to pure 5CB.
These findings underline the potential of InP/ZnS QDs as functional dopants for modulating dielectric performance in liquid crystal-based electro-optic devices, contributing to the development of next-generation tunable display and sensing technologies.
Deo, Manish, R. K. Chauhan, and Manish Kumar. Micro and Nanostructures 185 (2024): 207710.
InP/ZnS quantum dots (QDs) are applied as an environmentally friendly buffer layer in Cu(In₁₋ₓGaₓ)Se₂ (CIGS)-based thin-film solar cells, offering a promising alternative to conventional CdS layers. Owing to their non-toxic nature and favorable optoelectronic properties, InP/ZnS QDs improve light absorption and broaden the spectral response, directly contributing to higher power conversion efficiency (PCE).
This study introduces a device architecture composed of front contact/n-ZnO/n-(InP/ZnS)/p-CIGS/p-MoS₂/back contact. Here, InP/ZnS QDs serve as the buffer layer, while the CIGS absorber possesses a graded bandgap to better harness the solar spectrum. MoS₂ functions as the hole transport layer (HTL), and ZnO acts as the window layer.
Numerical simulations demonstrate that the inclusion of InP/ZnS QDs significantly enhances photovoltaic performance. Optimal efficiency (31.20%) is achieved when the gallium content (x) in CIGS is maintained between 0.15 and 0.20. Further performance gains are realized by tuning the absorber layer's thickness, doping concentration, and defect density.
These findings validate the potential of InP/ZnS QDs as a viable, non-toxic buffer layer that not only replaces CdS but also boosts the overall efficiency of CIGS solar cells. This advancement is pivotal for the development of high-performance, eco-friendly photovoltaic devices.
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