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Graphene on Ultra-flat Thermal SiO₂ Substrate

Catalog Number

ACM7782425-132

CAS

7782-42-5

Description

1. Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
2. Substrate: The Ultra-flat Thermal SiO₂ Substrate consists of a 200nm thermally grown SiO₂ film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
3. Graphene coverage of the ultra-flat silicon is > 75%

Application

1) Catalyst2) Supercapacitors3) Solar energy4) Graphene semiconductor chips5) Conductive graphene film6) Graphene computer memory7) Biomaterials8) Transparent conductive coatings

Our products are for research use only and cannot be used for any clinical purposes.

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