Silicon/silicon dioxide substrates are ideal for a variety of uses, including as FET substrates, or in X-ray studies, surface microscopy analysis, or to assist with ellipsometry measurements. Our Si/SiO2 wafers are polished on the front, etched on the back, and fit in a substrate rack for convenient batch processing and cleaning.
Orientation
<100>
Oxide Thickness
300nm
Resistivity
<0.005 ohm-cm
Size
4-Inch
Type/Doping
P/Boron
Wafer Thickness
525±25 ㎛
Our products are for research use only and cannot be used for any clinical purposes.
