One Silicon/Silicon dioxide (90 nm) wafers: 4" Diameter, P-type
Catalog Number
ACMA00020873
Product Name
One Silicon/Silicon dioxide (90 nm) wafers: 4" Diameter, P-type
Application
Silicon/silicon dioxide substrates are ideal for a variety of uses, including as FET substrates, or in X-ray studies, surface microscopy analysis, or to assist with ellipsometry measurements. Our Si/SiO2 wafers are polished on the front, etched on the back, and fit in a substrate rack for convenient batch processing and cleaning.
Back Surface
Polished
Color
Violet
Front Surface
Etched
Orientation
<100>
Oxide Thickness
90 nm
Resistivity
0.001-0.005 ohm-cm
Size
Diameter 100 mm (4")
Type/Doping
P/Boron
Wafer Thickness
525 micron
Weight
0.50 lbs
Our products are for research use only and cannot be used for any clinical purposes.
