Our monolayer graphene on SiO₂/Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO₂/Si (90nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market - not only for its excellent quality, but also for its shape, size and number of applications.
Appearance
Transparent
Application
Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics, Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS
Coverage
> 95%
Front Surface
Polished
Grain Size
Up to 20 μm
Graphene Thickness
1
Mobility
1500 cm₂ /Vs
Orientation
<100>
Production Method
CVD synthesis
Resistivity
1-10 ohm·cm
Sheet Resistance
450±40 Ohms/sq (1cm x1cm)
Thickness
0.345 nm (theoretical)
Transparency
> 97%
Type/Doping
P/B
Wafer Thickness
525 +/- 20 μm(4" wafer) 675 +/- 20 μm(6" wafer)
Our products are for research use only and cannot be used for any clinical purposes.
