Graphene filmGrowth Method: CVD synthesisTransfer Method: Clean transfer methodQuality Control: Optical Microscopy & Raman checkedSize: 1 cm x 1 cmAppearance (Color): TransparentTransparency: >97%Appearance (Form): FilmCoverage: >95%Number of graphene layers: 1Thickness (theoretical): 0.345 nmFET Electron Mobility on Al2O3: 2; 000 cm₂ /V·sFET Electron Mobility on SiO2/Si (expected): 4; 000 cm₂ /V·sSheet Resistance: 600 Ohms/sq.Grain size: Up to 10 μmSubstrateSize: 1.25 cm x 1.25 cmType/Dopant: P/BOrientation: 100Growth Method: CZResistivity: 1-30 ohmcmThickness: 525 +/- 25μmFront Surface: polishedBack Surface: etchedCoating: 300 nm thermal oxide on both wafer sides
Appearance
film
Application
Graphene may be extensively incorporated in several applications, such as; nanoelectronics, fuel cells, solar cell, photovoltaic devices, in biosensing, optical biosensors, MEMS, NEMS, field effect transistors (FETs), chemical sensors, nanocarriers in biosensing assays.
Color
Transparent
Coverage
>95%
Graphene Thickness
Monolayer
Production Method
Growth Method: CVD synthesis Transfer Method: Clean transfer method
Quality Level
100
Sheet Resistance
600 Ω/sq
Size
1 cm × 1 cm × (theoretical) 0.345 nm, monolayer graphene film (L × W)
Thickness
0.345 nm
Transparency
>97%
Our products are for research use only and cannot be used for any clinical purposes.
