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Catalog NumberACM10043115-11
CAS Number10043-11-5
CategoryhBN Ink
Chen, Tingjie, et al. Chemical Engineering Journal 429 (2022): 132135.
Hexagonal boron nitride (h-BN) ink has been investigated as a functional fire-retardant additive to improve the thermal safety of renewable and biodegradable plant fiber sponges (PFS), which are prone to combustion and limit their structural applications. In this study, h-BN nanosheets were first functionalized via water bath sonication, then incorporated into a polyurethane (PU) emulsion to form a highly thermally conductive, hydrophilic h-BN ink. The ink was deposited onto PFS using a simple dip-coating method, yielding PFS@h-BN with uniform nano-laminated coatings.
The resulting PFS@h-BN demonstrated significantly enhanced fire safety performance compared to unmodified PFS. The limiting oxygen index (LOI) increased by 29%, the time to ignition was prolonged fourfold, and the time to flameout increased by 500 seconds. Furthermore, the peak heat release rate (HRR) decreased by 21%, total smoke release (TSR) dropped by 35.1%, and the compression strength at 80% strain improved by 1.47 MPa. The anisotropic thermal conductivity of the h-BN coating facilitated rapid heat dissipation, while the protective nanosheet barrier limited oxygen access and delayed combustion propagation.
This facile and scalable dip-coating approach enables environmentally friendly fabrication of structurally robust, fire-resistant plant fiber sponges. The study demonstrates that hexagonal boron nitride ink can effectively impart thermal protection and mechanical reinforcement, presenting a promising strategy for safe, energy-efficient building materials and other sustainable applications requiring fire-retardant performance.
Chen, Liming, et al. Advanced Materials 36.18 (2024): 2312621.
Hexagonal boron nitride (h-BN) ink has been investigated as a key material for the fabrication of high-performance wearable and wireless humidity sensors. Despite h-BN's excellent dielectric properties, chemical stability, and thermal resilience, its intrinsic hydrophobicity and high resistance have limited its sensitivity to water molecules, restricting its application in relative humidity (RH) sensing. Traditional approaches to improve h-BN's water sensitivity, such as polymer blending or high-temperature 3D structuring, face challenges of substrate compatibility and energy inefficiency.
In this study, a one-pot supramolecular functionalization strategy was employed to modify solution-processed h-BN ink without requiring polymer additives. The resulting functionalized ink was integrated into an impedance-based sensor on flexible substrates, producing a wearable and wireless device with exceptional performance. The sensor exhibited an ultra-high sensitivity exceeding 10¹⁰ Ω per %RH across the full range of 5-100% RH, a rapid response time of 0.1 ms, negligible hysteresis, and minimal temperature cross-sensitivity between 25-60 °C.
The device successfully detected real-time breathing patterns in various users, capturing signals associated with daily activity as well as clinical indicators of respiratory conditions such as COVID-19 and influenza. The use of supramolecularly functionalized h-BN ink enables scalable, low-cost fabrication of flexible sensors while maintaining high chemical and thermal stability. This work highlights the potential of hexagonal boron nitride ink for next-generation wearable sensing applications, demonstrating a significant advance in polymer-free, high-sensitivity, and wireless humidity detection.
Hossain, R. F., & Kaul, A. B. (2020). Journal of Vacuum Science & Technology B, 38(4).
Hexagonal boron nitride (h-BN) ink has emerged as a critical material for the fabrication of all inkjet-printed field-effect transistors (FETs), offering a low-cost, scalable alternative to conventional silicon-based electronics. In this work, h-BN ink was utilized as the dielectric layer in a fully inkjet-printed FET architecture, combined with electrically conducting graphene and semiconducting molybdenum disulfide (MoS2). The device was sequentially printed on an Si/SiO2 substrate, including a graphene bottom gate, h-BN dielectric, graphene source/drain electrodes, and a semiconducting MoS2 bridging layer.
The h-BN dielectric layer demonstrated a dielectric constant of approximately 4, providing stable capacitive coupling between the gate and semiconductor layer. The drop-cast h-BN ink was analyzed for optimal annealing temperature, ensuring minimal leakage current and high device reliability. Capacitance-frequency and capacitance-voltage measurements revealed a maximum capacitance of ~36 pF at 1 kHz under 20 V, confirming the material's suitability for precise electronic applications.
Functionally, the h-BN layer enabled modulation of the source-drain current through charge accumulation, allowing sensitive detection of interactions between biological molecules and the MoS2 semiconductor. This property demonstrates the potential of h-BN ink for flexible, additive-manufactured FETs in biosensing and other electronic applications, where low-cost and scalable fabrication are essential. The study highlights h-BN ink as a high-performance dielectric for next-generation printed electronics, bridging the gap between 2D nanomaterials and practical device implementation.
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