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Zhang, Zhuhua, et al. Nano letters, 16.2 (2016): 1398-1403.
Hexagonal boron nitride (h-BN) sheets are structural analogs of graphene, but due to their binary composition, their growth mechanisms have rarely been studied. Here, by combining crystal growth theory with comprehensive first-principles calculations, the atomic growth mechanism of h-BN islands is revealed.
Growth Mechanism
With suppressed defect formation, the determined assembly order of edge atomic rows shows strong anisotropy of growth dynamics. One advantage of h-BN growth is that its kinetics can be controlled by adjusting the chemical balance between B and N. Under N-rich conditions, the growth of zigzag N edges needs to overcome significant nucleation barriers and becomes the slowest among all edge directions, forming h-BN islands into N-terminated triangles. Under B-rich conditions, the shape of BN on Cu can evolve into a truncated triangle or hexagon with additional B-terminal edges, similar to the shapes obtained in several experiments; while the h-BN islands on Ni can be B end triangles, which requires clarifying the edge orientation of the synthesized h-BN triangles. This result provides the first atomic map of the growth of 2D binary materials and will provide useful guidance for the controlled synthesis of high-quality layers or even ideally shaped hybrid h-BN/C50.
Zhang, Kailiang, et al. Journal of Materials Chemistry C. 5.46 (2017): 11992-12022.
Two-dimensional hexagonal boron nitride (2D-hBN) is a graphene variant with a very similar layered structure, whose unique features are its exotic optoelectronic properties as well as its mechanical robustness, thermal stability and chemical inertness. Therefore, it is widely studied for use in field effect transistors (FETs), tunnel devices, deep ultraviolet emitters and detectors, optoelectronic devices and nanofillers.
Synthesis Methods of 2D-hBN Nanosheets
Synthesis and processing play a decisive role in the structure, crystallinity and properties of 2D h-BN nanosheets and their corresponding performance in devices. Various processing strategies have been devised to fabricate single- and multilayer h-BN, particularly aiming to produce high quality and significant lateral dimensions in large yields. The most advanced types of 2D h-BN prepared by new synthesis strategies are provided here. The mainstream methods include: mechanical exfoliation, liquid exfoliation, chemical vapor deposition, and other new synthesis methods include ion intercalation-assisted exfoliation, physical vapor deposition, Methods based on surface segregation, pulsed laser deposition, pyrolysis of compounds containing B and N elements, decompression of BN nanotubes.
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