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Graphene Field-Effect Transistor Chip

Catalog Number

ACMA00027011

Chip Dimensions

10 mm x 10 mm

Chip Thickness

675 μm

Dirac Point

< 50 V

Gate Oxide Material

SiO2

Gate Oxide Thickness

90 nm

Graphene Field-Effect Mobility

> 1000 cm²/V·s

MaximumDrainSourceCurrentDensity

107 A·cm-2

Maximum Gate-Source Voltage

± 50 V

Maximum Temperature Rating

150 °C

Metallization

Au contacts

Number of GFETs per Chip

Yield

> 75 %

Our products are for research use only and cannot be used for any clinical purposes.

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